SEMICONDUCTOR
TECHNICAL DATA
TIP117
EPITAXIAL PLANAR PNPTRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES ᴌHigh DC Current Gain.
: hFE=1000(Min.), ᷤVCE=-4V, IC=-1A. ᴌLow Collector-Emitter Saturation Voltage. ᴌComplementary to TIP112.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Volta...