D1FJ10
Schottky Barrier Diodes 100V, 1A
Feature
・Small SMD ・High Recovery Speed ・Based on AEC-Q101 ・Pb free terminal ・Ro...
D1FJ10
Schottky Barrier Diodes 100V, 1A
Feature
・Small SMD ・High Recovery Speed ・Based on AEC-Q101 ・Pb free terminal ・RoHS:Yes
OUTLINE
Package (House Name): 1F Package (JEDEC Code): DO-214AC
Equivalent circuit
Absolute Maximum Ratings (unless otherwise specified : Tl=25℃)
Item
Symbol
Conditions
Ratings
Unit
Storage temperrature
Tstg
-55 to 150
℃
Junction temperature
Tj
-55 to 150
℃
Repetitive peak reverse voltage Average forward current
VRRM IF(AV)
50Hz sine wave, Resistance load, Tl=129℃
100
V
1
A
Average forward current
IF(AV)
50Hz sine wave, Resistance load, On alumina substrate, Ta=52℃ ※
1
A
50Hz sine wave, Resistance load, On glass-epoxy
Average forward current
IF(AV) substrate, Ta=36℃ ※
0.8
A
Surge forward current
50Hz sine wave, Non-repetitive, 1cycle, Peak value,
IFSM
Tj=25℃
50
A
※︓See the original Specifications
Shindengen Electric Manufacturing Co., Ltd. 1/8
D1FJ10_Rev.01(2020.01)
Electrical Characteristics (unless otherwise specified : Tl=25℃)
Item
Symbol
Conditions
Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance Thermal resistance
VF IR Ct Rth(j-l) Rth(j-a) Rth(j-a)
IF=1A, Pulse measurement VR=100V, Pulse measurement f=1MHz, VR=10V Junction to lead Junction to ambient, On alumina substrate ※ Junction to ambient, On glass-epoxy substrate ※
※︓See the original Specifications
Ratings MIN TYP MAX
0.72 0.2 63 23 108 157
Unit
V mA pF ℃/W ℃/W ℃/W
Shindengen Electric Manufacturing ...