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D1FJ10

SHINDENGEN

Schottky Barrier Diode

D1FJ10 Schottky Barrier Diodes 100V, 1A Feature ・Small SMD ・High Recovery Speed ・Based on AEC-Q101 ・Pb free terminal ・Ro...


SHINDENGEN

D1FJ10

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D1FJ10 Schottky Barrier Diodes 100V, 1A Feature ・Small SMD ・High Recovery Speed ・Based on AEC-Q101 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): 1F Package (JEDEC Code): DO-214AC Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -55 to 150 ℃ Junction temperature Tj -55 to 150 ℃ Repetitive peak reverse voltage Average forward current VRRM IF(AV) 50Hz sine wave, Resistance load, Tl=129℃ 100 V 1 A Average forward current IF(AV) 50Hz sine wave, Resistance load, On alumina substrate, Ta=52℃ ※ 1 A 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=36℃ ※ 0.8 A Surge forward current 50Hz sine wave, Non-repetitive, 1cycle, Peak value, IFSM Tj=25℃ 50 A ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/8 D1FJ10_Rev.01(2020.01) Electrical Characteristics (unless otherwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance Thermal resistance VF IR Ct Rth(j-l) Rth(j-a) Rth(j-a) IF=1A, Pulse measurement VR=100V, Pulse measurement f=1MHz, VR=10V Junction to lead Junction to ambient, On alumina substrate ※ Junction to ambient, On glass-epoxy substrate ※ ※︓See the original Specifications Ratings MIN TYP MAX 0.72 0.2 63 23 108 157 Unit V mA pF ℃/W ℃/W ℃/W Shindengen Electric Manufacturing ...




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