Document
BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G
High Voltage Switching Diode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz
VR VRRM
IF IFRM IFSM(surge)
250 250 200 500 625
Vdc Vdc mAdc mA mAdc
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to surge)
IFSM
A
t = 1 ms
20
t = 10 ms
20
t = 100 ms
10
t = 1 ms
4
t=1s
1
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C
Derate above 25°C
PD
200 mW 1.57 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
635 °C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
S.