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BAS21HT3G Dataheets PDF



Part Number BAS21HT3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Voltage Switching Diode
Datasheet BAS21HT3G DatasheetBAS21HT3G Datasheet (PDF)

BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz VR VRRM IF IFRM IFSM(surge) 250.

  BAS21HT3G   BAS21HT3G


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BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G High Voltage Switching Diode Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz VR VRRM IF IFRM IFSM(surge) 250 250 200 500 625 Vdc Vdc mAdc mA mAdc Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) IFSM A t = 1 ms 20 t = 10 ms 20 t = 100 ms 10 t = 1 ms 4 t=1s 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C S.


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