DatasheetsPDF.com

MT16HTF6464A Dataheets PDF



Part Number MT16HTF6464A
Manufacturers Micron
Logo Micron
Description 512MB DDR2 SDRAM Unbuffered DIMM
Datasheet MT16HTF6464A DatasheetMT16HTF6464A Datasheet (PDF)

512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM Unbuffered DIMM MT16HTF6464A – 512MB MT16HTF12864A – 1GB MT16HTF25664A – 2GB For component specifications, refer to the Micron’s Web site: www.micron.com/ddr2 Features • 240-pin, unbuffered, dual in-line memory module (UDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC25300, or PC2-6400 • 512MB (64 Meg x 64), 1GB (128 Meg x 64), and 2GB (256 Meg x 64) • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC standard 1.

  MT16HTF6464A   MT16HTF6464A


Document
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM Unbuffered DIMM MT16HTF6464A – 512MB MT16HTF12864A – 1GB MT16HTF25664A – 2GB For component specifications, refer to the Micron’s Web site: www.micron.com/ddr2 Features • 240-pin, unbuffered, dual in-line memory module (UDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC25300, or PC2-6400 • 512MB (64 Meg x 64), 1GB (128 Meg x 64), and 2GB (256 Meg x 64) • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • Four-bit prefetch architecture • DLL to align DQ and DQS transitions with CK • Multiple internal device banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency - 1 tCK • Programmable burst lengths: 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination (ODT) • Seri.


SMMSD701T1G MT16HTF6464A MT16HTF12864A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)