MMSD701T1G

SOD-123 Schottky Barrier Diodes MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G VR Vdc 30 70 Forward Current (DC) Continous IF 200 mA Forward Power Dissipation TA = 25°C PF mW 225 Junction Temperature TJ −55 to +125 °C Storage Temperature Range Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com SOD−123 CASE 425 STYLE 1 1 Cathode 2 Anode MARKING DIAGRAM 1 XXX MG G xx = Specific Device Code XT = MMSD301T1G SMMSD301T1G XH = MMSD701T1G SMMSD701T1G M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMSD301T1G SMMSD301T1G Package SOD−123...