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MMSD301T1G Dataheets PDF



Part Number MMSD301T1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description SOD-123 Schottky Barrier Diodes
Datasheet MMSD301T1G DatasheetMMSD301T1G Datasheet (PDF)

SOD-123 Schottky Barrier Diodes MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage • AEC Qualified and PPAP Capable • S Prefix for Automotive and .

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SOD-123 Schottky Barrier Diodes MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, The MMSD301T1, and MMSD701T1 devices are spin−offs of our popular MMBD301LT1, and MMBD701LT1 SOT−23 devices. They are designed for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage • AEC Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G VR Vdc 30 70 Forward Current (DC) Continous IF 200 mA Forward Power Dissipation TA = 25°C PF mW 225 Junction Temperature TJ −55 to +125 °C Storage Temperature Range Tstg − 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com SOD−123 CASE 425 STYLE 1 1 Cathode 2 Anode MARKING DIAGRAM 1 XXX MG G xx = Specific Device Code XT = MMSD301T1G SMMSD301T1G XH = MMSD701T1G SMMSD701T1G M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MMSD301T1G SMMSD301T1G Package SOD−123 (Pb−Free) SOD−123 (Pb−Free) Shipping† 3,000 / Tape & Reel 3,000 / Tape & Reel MMSD701T1G SMMSD701T1G SOD−123 (Pb−Free) SOD−123 (Pb−Free) 3,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 1 August, 2020 − Rev. 7 Publication Order Number: MMSD301T1/D MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Reverse Breakdown Voltage (IR = 10 mA) MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G V(BR)R 30 − − 70 − − Diode Capacitance (VR = 0 V, f = 1.0 MHz) MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G CT − 0.9 1.5 − 0.5 1.0 Total Capacitance (VR = 15 V, f = 1.0 MHz) MMSD301T1G, SMMSD301T1G (VR = 20 V, f = 1.0 MHz) MMSD701T1G, SMMSD701T1G CT − 0.9 1.5 − 0.5 1.0 Reverse Leakage (VR = 25 V) MMSD301T1G, SMMSD301T1G (VR = 35 V) MMSD701T1G, SMMSD701T1G IR − 13 200 − 9.0 200 Forward Voltage (IF = 1.0 mAdc) MMSD301T1G, SMMSD301T1G (IF = 10 mA) (IF = 1.0 mAdc) MMSD701T1G, SMMSD701T1G (IF = 10 mA) VF − 0.38 0.45 − 0.52 0.6 − 0.42 0.5 − 0.7 1.0 Unit V pF pF nAdc Vdc www.onsemi.com 2 CT, TOTAL CAPACITANCE (pF) MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, TYPICAL CHARACTERISTICS MMSD301T1G, SMMSD301T1G 2.8 MMSD301T1 2.4 f = 1.0 MHz 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Total Capacitance t , MINORITY CARRIER LIFETIME (ps) 500 MMSD301T1 400 KRAKAUER METHOD 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 IF, FORWARD CURRENT (mA) Figure 2. Minority Carrier Lifetime 10 MMSD301T1 1.0 TA = 100°C TA = 75°C 0.1 TA = 25°C 0.01 0.001 0 6.0 12 18 24 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Leakage IF, FORWARD CURRENT (A) 0.1 MMSD301T1 0.01 TA = 85°C TA = - 40°C 0.001 TA = 25°C 0.0001 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage IR, REVERSE LEAKAGE (mA) www.onsemi.com 3 CT, TOTAL CAPACITANCE (pF) MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, TYPICAL CHARACTERISTICS MMSD701T1G, SMMSD701T1G t , MINORITY CARRIER LIFETIME (ps) 2.0 MMSD701T1 1.6 1.2 f = 1.0 MHz 500 MMSD701T1 400 KRAKAUER METHOD 300 0.8 200 0.4 100 0 0 5.0 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Total Capacitance 0 0 10 20 30 40 50 60 70 80 90 100 IF, FORWARD CURRENT (mA) Figure 6. Minority Carrier Lifetime 10 MMSD701T1 1.0 TA = 100°C TA = 75°C 0.1 0.01 TA = 25°C 0.001 5 15 25 35 45 55 65 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Reverse Leakage IF, FORWARD CURRENT (mA) 100 MMSD701T1 10 TA = 85°C TA = - 40°C 1.0 TA = 25°C 0.1 0.2 0.4 0.8 1.2 1.6 2.0 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage IR, REVERSE LEAKAGE (mA) www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SCALE 5:1 SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 D ÂÂÂÂÂÂ1 ÂÂÂÂÂÂ HE E A A1 2 q b L C SOLDERING FOOTPRINT* 0.91 ÉÉÉÉÉÉÉÉÉ 0.03.


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