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BAS16XV2

ON Semiconductor

Switching Diode

DIE DATA SHEET www.onsemi.com Switching Diode BAS16XV2 Features • High−Speed Switching Applications • Lead Finish: 100...


ON Semiconductor

BAS16XV2

File Download Download BAS16XV2 Datasheet


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DIE DATA SHEET www.onsemi.com Switching Diode BAS16XV2 Features High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 V Continuous Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Repetitive Peak Forward Current IFRM 500 mA (Pulse Wave = 1 sec, Duty Cycle = 66%) Non−Repetitive Peak Forward Current IFSM A (Square Wave, TJ = 25°C prior to surge) t = 1 ms 4.0 t = 1 ms 1.0 t=1s 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR-5 Minimum Pad. RθJA TJ, Tstg 635 −55 to 150 °C/W °C 1 CATHODE 2 ANODE 2 1 SOD−523 CASE 502 MARKING DIAGRAM A6 MG 1 G 2 A6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERI...




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