Silicon Switching Diode
BAS16WT1G
Silicon Switching Diode
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Sit...
Description
BAS16WT1G
Silicon Switching Diode
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
3 CATHODE
1 ANODE
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current Pulse Width = 10 ms
VR IR IFM(surge)
100 200 500
V mA mA
Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm)
PD 200 mW 1.6 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may aff...
Similar Datasheet