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RB521C30

WillSEMI

Schottky Barrier Diode

RB521C30 Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage c...


WillSEMI

RB521C30

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RB521C30 Schottky Barrier Diode Features  100mA Average rectified forward current  Low forward voltage  Low leakage current  Small package SOD-923 Applications  Low Current rectification Absolute maximum ratings Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (8.3ms single sine pluse) Junction temperature Operating temperature Storage temperature RB521C30 http://www.willsemi.com SOD-923 Circuit Symbol VRM VR IO IFSM TJ Topr Tstg Marking Value 30 30 100 0.5 150 -40 ~ 125 -40 ~ 150 Unit V V mA A OC OC OC Electronics characteristics (TA=25oC) Parameter Symbol Condition Reverse Voltage Forward Voltage Reverse current Junction capacitance Thermal Resistance VR VF IR CJ Rθ(JA) IR=100uA IF=10mA IF=100mA VR=10V VR=30V VR=5V, F=1MHz Junction to Ambient Order Informations Device RB521C30-2/TR Package SOD-923 Min. 30 Typ. 21 650 Max. Unit 0.35 0.47 6 15 V V uA uA pF K/W Marking 1* (1...




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