NGTB05N60R2DT4G

NGTB05N60R2DT4G IGBT 600V, 8A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]  IGBT tf=95ns (typ) Diode VF=1.5V (typ) [IF=5A] Diode trr=70ns (typ) 5s Short Circuit Capability Applications  General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25C *2 @Tc=100C *2 Collector Current (Peak) Pulse width Llimited by Tjmax Diode Average Output Current Power Dissipation Tc=25C (Our ideal heat dissipation condition) *2 Junction Temperature Storage Temperature Symbol VCES VGES IC *1 ICP IO PD Tj Tstg Value 600 20 16 8 20 8 56 175 55 to +175 Unit V V A A A A W C C Note :  *1 Collector Current is calculated from the following form...