NGTB30N135IHRWG

NGTB30N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, provides superior performance in demanding switching applications, and offers low on−state voltage with minimal switching losses. The IGBT is well suited for resonant or soft switching applications. Features Extremely Efficient Trench with Fieldstop Technology 1350 V Breakdown Voltage Optimized for Low Losses in IH Cooker Application Reliable and Cost Effective Single Die Solution These are Pb−Free Devices Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage @ TJ = 25°C Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax 10 ms pulse, VGE = 15 V Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limite...