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FGH50T65SQD Dataheets PDF



Part Number FGH50T65SQD
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Field Stop Trench IGBT
Datasheet FGH50T65SQD DatasheetFGH50T65SQD Datasheet (PDF)

FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT April 2016 Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant General Description Using novel field stop IGBT technology, Fa.

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FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT April 2016 Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant General Description Using novel field stop IGBT technology, Fairchild’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ILM (1) ICM (2) IF IFM PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter V.


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