CBSL150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Sta...
CBSL150
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers.
PACKAGE STYLE .400 BAL FLG (C) FEATURES:
Internal Input/Output Matching PG = 9.0 dB Typ. at 150 W/ 900 MHz Omnigold™ Metalization System
E D C .1925 F H I N L J DIM A MINIMUM
inches / mm
.080x45°
A
B
FULL R (4X).060 R
M
G
MAXIMUM RATINGS
IC VCEO VCES VEBO PDISS TJ TSTG θ JC 25 A 28 V 60 V 3.5 V 300 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 0.6 OC/W
O
.220 / 5.59 .210 / 5.33 .120 / 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08
K
MAXIMUM
inches / mm
.230 / 5.84
B C D E F G H I J K L M N .395 / 10.03 .850 / 21.59
.130 / 3.30 .390 / 9.91 .820 / 20.83
1.345 / 34.16 .007 / 0.18 .070 / 1.78 .100 / 2.54 .205 / 5.21 .407 / 10.34 .870 / 22.10
ORDER CODE: ASI10586
O
CHARACTERISTICS
SYMBOL
BVCEO BVCER BVCES BVEBO ICES hFE PG IMD ηC ψ
TC = 25 C
NONETEST CONDITIONS
IC = 100 mA IC = 100 mA IC = 50 mA IE = 10 mA VCE = 30 V VCE = 5.0 V VCC = 26 V IC = 1.0 A POUT = 150 W ICQ = 2 X 150 mA f = 960 MHz RBE = 200 Ω
MINIMUM TYPICAL MAXIMUM
26 35 60 3.5 10 30 8.0 -28 35 45 120
UNITS
V V V V mA --dB dBc %
VSWR = 5:1 at all phase angles
No Degradation in Output Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
...