CBSL15
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL15 is Designed for
.040x45° C B 2XØ.130
PACKAGE STYLE ...
CBSL15
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI CBSL15 is Designed for
.040x45° C B 2XØ.130
PACKAGE STYLE .230 6L FLG
A 4X .025 R .115 .430 D E .125 G H I J K L F
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 2.5 A 48 V 30 V 4.0 V 29 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 6.0 OC/W
O O O
DIM A B C D E F G H I J K L MINIMUM
inches / mm
MAXIMUM
inches / mm
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60
ORDER CODE: ASI10581
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO hFE COB PG ηC IC = 50 mA IC = 20 mA IE = 5 mA VCB = 24 V VCE = 10 V VCB = 24 V
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
48 25 3.5 4.0 --1.0 100 25 8.0 50
UNITS
V V V mA --pF dB %
IC = 100 mA f = 1.0 MHz ICQ = 75 mA f = 960 MHz
20
VCC = 24 V POUT = 15 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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