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www.vishay.com
SQM70060EL
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package
TO-263
100 0.0059 0.0080
75 Single TO-263
D
FEATURES • TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified
• 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
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S D G
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b
TC = 25 °C a TC = 125 °C
VGS
ID
IS IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Maximum Power Dissipation b
TC = 25 °C TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT 100 .