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SQM70060EL Dataheets PDF



Part Number SQM70060EL
Manufacturers Vishay
Logo Vishay
Description Automotive N-Channel MOSFET
Datasheet SQM70060EL DatasheetSQM70060EL Datasheet (PDF)

www.vishay.com SQM70060EL Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package TO-263 100 0.0059 0.0080 75 Single TO-263 D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 Top View S D G G S N-Channel MOSFET .

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www.vishay.com SQM70060EL Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration Package TO-263 100 0.0059 0.0080 75 Single TO-263 D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 Top View S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C a TC = 125 °C VGS ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 100 .


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