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CB35000 SERIES
HCMOS STANDARD CELLS
PRELIMINARY DATA
FEATURES
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0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 210 ps (typ) with fanout = 2...
