Automotive Dual-Channel MOSFET
www.vishay.com
SQJ570EP
Vishay Siliconix
Automotive N- and P-Channel 100 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Dual
...
Description
www.vishay.com
SQJ570EP
Vishay Siliconix
Automotive N- and P-Channel 100 V (D-S) 175 °C MOSFET
PowerPAK® SO-8L Dual
6.15 mm
1 Top View
5.13 mm
D1
D2
1 2 S1 3 G1 4 S2 G2
Bottom View
PRODUCT SUMMARY
N-CHANNEL P-CHANNEL
VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID (A) Configuration
100
-100
0.0450
0.1460
0.0580
0.2065
15
-9.5
N- and p-pair
FEATURES TrenchFET® power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
D1
S2
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8L
SQJ570EP (for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain-source voltage Gate-source voltage
Continuous drain current
Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche Energy
Maximum power dissipation b
Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
100
-100
± 20
15 a
-9.5
9.6
-5.5
15
-15
40
-21
13
-6
8.4
1.8
27
27
9
9
-55 to +175
260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-ambient Junction-to-case (drai...
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