Document
Schottky Barrier Diode
RB095B-60
Applications General rectification
Dimensions(Unit : mm)
Data Sheet
Land size figure(Unit : mm) 6.0
3.0 2.0 6.0
Features 1) Power mold type. (CPD3) 2) Low VF 3) High reliability
Construction Silicon epitaxial planar
1.6 1.6
CPD 2.3 2.3
Structure
(2)
Taping dimensions(Unit : mm)
2.0±0.05 4.0±0.1
8.0±0.1
(1) (3)
φ1.55±0.1 0
0.4±0.1
2.5±0.1
TL
10 .1±0.1
10.1±0.1 1 3.5±0 .2
7.5±0.05 1 6.0 ±0 .2
0~0.5
6.8±0.1
8.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1)
VRM VR Io
60 60 6
Forward current surge peak(60Hz・1cyc)(*1) Junction temperature
IFSM Tj
45 150
Storage temperature
Tstg 40 to 150
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=112C
φ3.0±0.1
Unit V V A A C C
2.7±0.2
Electrical characteristic (Ta=25C) Para.