Document
Schottky Barrier Diode
RB085BM-60
lApplication General Rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
3.0 2.0 6.0
lFeatures 1) Power mold type (TO-252) 2) Cathode common dual type 3) High reliability 4) Low VF
lConstruction Silicon epitaxial planar type
1
ROHM : TO-252 JEITA : SC-63
1 : Manufacture Date
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2) Cathode
(1) (3) Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 60 V Duty≦0.5
Reverse Voltage Average forward rectified current Non-repetitive Forward Current Surge Peak Operating Junction Temperature
VR Io IFSM Tj
60 V Direct Reverse Voltage
10
A
60Hz half sin Wave resistive load, Tc=96°C max., 1/2 Io per diode
50
A
60Hz half sin wave, Non-repetitive at Ta=25ºC, per diode
150 °C
-
Storage Temperature
Tstg -40 to +150 °C
-
lElectrical characteristics (Tj = 25°C).