MITMSIUTSBUISBHISI LHSI ILsSIs
M5M44405CJM,T5MP4-4540,-56C,J-,T7P,--55,-S6,,-7-,6-5SS,,--67SS,-7S
EDOED(OHY( PHEYRPEPRA...
MITMSIUTSBUISBHISI LHSI ILsSIs
M5M44405CJM,T5MP4-4540,-56C,J-,T7P,--55,-S6,,-7-,6-5SS,,--67SS,-7S
EDOED(OHY( PHEYRPEPRAGPAEGMEOMDOED) E41)9441390443-0B4IT-B(IT10(4180547865-7W6O-WRODRBDYB4Y-B4IT-B)ITDY) NDAYNMAICMRICARMAM
DESCRIPTION This is a family of 1048576-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal for largecapacity memory systems where high speed, low power dissipation, and low costs are essential. The use of quadruple-layer polysilicon process combined with silicide technology and a single-
transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities.
Self or extended refresh current is low enough for battery back-up application.
PIN CONFIGURATION (TOP VIEW)
DQ1 1 DQ2 2
W3 RAS 4
A9 5
26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE
FEATURES
Type name
RAS access
time
(max.ns)
CAS access
time
(max.ns)
Address a...