MITSUBISHI LSI.
M5K4164AP-12, -15
65 536·BIT (65 536·WORD BY 1.BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65 536...
MITSUBISHI LSI.
M5K4164AP-12, -15
65 536·BIT (65 536·WORD BY 1.BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-
transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities_ The M5K4164AP operates on a 5V power supply using the on-chip substrate bias generator_
PIN CONFIGURATION (TOP VIEW)
REFRESH INPUT REF
DATA INPUT WRITE
CONTROL INPUT ROW ADDRESS STROBE INPUT
ADDRESS INPUTS
(WI Vee
Vss (OV) 15 ... CAS ~?~g~EN 1~~8fESS
I ... Q DATA OUTPUT
ADDR...