M5K4164AP-12

MITSUBISHI LSI. M5K4164AP-12, -15 65 536·BIT (65 536·WORD BY 1.BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities_ The M5K4164AP operates on a 5V power supply using the on-chip substrate bias generator_ PIN CONFIGURATION (TOP VIEW) REFRESH INPUT REF DATA INPUT WRITE CONTROL INPUT ROW ADDRESS STROBE INPUT ADDRESS INPUTS (WI Vee Vss (OV) 15 ... CAS ~?~g~EN 1~~8fESS I ... Q DATA OUTPUT ADDR...