SVF2N70M

SVF2N70M/F/D_Datasheet 2A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N70M/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 2A,700V,RDS(on)(typ.)=5.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF2N70M SVF2N70M SVF2N70F SVF2N70D SVF2N70DTR Package TO-251-3L TO-251D-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVF2N70M SVF2N70M SVF2N70F SVF2N70D SVF2N70D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & ...