SAMWIN
SW6N60
N-channel MOSFET
Features
TO-220F
TO-251
TO-252
■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Ga...
SAMWIN
SW6N60
N-channel MOSFET
Features
TO-220F
TO-251
TO-252
■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
12 3
12 3
12 3
1. Gate 2. Drain 3. Source
General Description
These N-channel enhancement mode power field effect
transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers
BVDSS : 600V ID : 6A RDS(ON) :1.5ohm
2
1 3
Order Codes
Item 1 2 3
Sales Type SW F 6N60 SW I 6N60 SW D 6N60
Absolute maximum ratings
Marking SW6N60 SW6N60 SW6N60
Symbol
Parameter
VDSS ID IDM VGS EAS EAR
dv/dt
Drain to Source Voltage Continuous Drain Current (@TC=25oC) Drain curre...