N-Channel MOSFET
SW7N60D
N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET
Features
TO-220F TO-220 TO-251 TO-252
High ...
Description
SW7N60D
N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET
Features
TO-220F TO-220 TO-251 TO-252
High ruggedness Low RDS(ON) (Typ 1.05Ω)@VGS=10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested Application:UPS,Inverter,
TV-POWER
1 23
1 23
1 23
1 23
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes
BVDSS : 600V
ID
: 7A
RDS(ON) : 1.05Ω
2
1 3
Item
Sales Type
1
SW F 7N60D
2
SW P 7N60D
3
SW I 7N60D
4
SW D 7N60D
Marking SW7N60D SW7N60D SW7N60D SW7N60D
Package TO-220F TO-220 TO-251 TO-252
Packaging TUBE TUBE TUBE REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy
(note 1)
(note 2) (note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
Value Unit
TO220F TO220 TO251 TO252
600
V
7
A
4.2
A
28
A
±30
V
420
mJ
49
mJ
5...
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