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ALD210808A Dataheets PDF



Part Number ALD210808A
Manufacturers Advanced Linear Devices
Logo Advanced Linear Devices
Description MOSFET
Datasheet ALD210808A DatasheetALD210808A Datasheet (PDF)

ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110808A/ALD110808 EPAD® MOSFET Family, with increased forward transconductance and output c.

  ALD210808A   ALD210808A



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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD210808A/ALD210808 PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE MATCHED PAIR VGS(th)= +0.80V GENERAL DESCRIPTION The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110808A/ALD110808 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages. Intended for low voltage, low power small signal applications, the ALD210808A/ ALD210808 features precision threshold voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than .


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