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ADVANCED LINEAR DEVICES, INC.
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EPAD ® ENAB
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ALD210808A/ALD210808
PRECISION N-CHANNEL EPAD® MOSFET ARRAY
QUAD HIGH DRIVE MATCHED PAIR
VGS(th)= +0.80V
GENERAL DESCRIPTION
The ALD210808A/ALD210808 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110808A/ALD110808 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages.
Intended for low voltage, low power small signal applications, the ALD210808A/ ALD210808 features precision threshold voltage, which enables circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than .