N-Channel MOSFET
HFD8N60U_HFU8N60U
HFD8N60U / HFU8N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
Description
HFD8N60U_HFU8N60U
HFD8N60U / HFU8N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
May 2014
BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A
D-PAK I-PAK
2
1 3
HFD8N60U
1 2 3
HFU8N60U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 6.0 3.8 24.0 ρ30 280 6.0 9.8 4.5
PD
TJ, ...
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