N-channel Enhancement-mode Power MOSFET
SSM9406GM N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
30V 18mΩ 9A
Pb-free; RoHS-compli...
Description
SSM9406GM N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
30V 18mΩ 9A
Pb-free; RoHS-compliant SO-8
D D D D
SO-8
G S SS
DESCRIPTION
The SSM9406GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM9406GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C Linear derating factor
Value 30 ±20 9 7.5 50 2.5 0.02
Units V V A A A W
W/°C
TSTG TJ
Storage temperature range Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol RΘJA
Parameter Maximum thermal resistance, junction-ambient3
-55 ...
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