Document
SSM6618M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance Fast switching speed Surface-mount package
Description
D D D D
SO-8
G SS S
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
BV DSS RDS(ON) ID
25V 30mΩ
7A
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating 25 ± 20 7 5.8 30 2.5 0.02
-55 to 150 -55 to 150
Units V V A A A W
W/°C °C °C
Max.
Value 50
Unit °CW
Rev.2.02 3/21/2004
www.SiliconStandard.com
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SSM6618M
Electrical Characteristics @ Tj=25oC (.