SSM9926EM

SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BV DSS RDS(ON) ID 20V 30mΩ 6A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-amb Thermal Resistance Junction-ambient Rating 20 ±12 6 4.8 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 62.5 Unit °C/W Rev.2.02 1/29/2004 www.SiliconStandard.com 1 of 6 ...