Dual N-channel Enhancement-mode Power MOSFET
SSM9977M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate charge Fast switching cha...
Description
SSM9977M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate charge Fast switching characteristics
Description
D2 D2 D1 D1
SO-8
G2 S2 G1 S1
BV DSS R DS(ON) ID
60V 90mΩ 3.5A
D1 D2
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SSM9977M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
G1
G2 S1
S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM9977GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Ran...
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