Dual N-channel Enhancement-mode Power MOSFET
SSM9973GM Dual N-channel Enhancement-mode Power MOSFETs
Simple drive requirement Lower gate charge Fast switching chara...
Description
SSM9973GM Dual N-channel Enhancement-mode Power MOSFETs
Simple drive requirement Lower gate charge Fast switching characteristics Pb-free; RoHS compliant.
DESCRIPTION
BVD2
D2 D1 D1
I
SO-8
R
G2 S2 G1 S1
BVDSS R DS(ON) ID
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
G1
D1 G2
The SSM9973M is in an SO-8 package, which is widely preferred for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters.
S1
60V 80mΩ 3.9A
D2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj...
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