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SSM2314GN N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.
DESCRIPTION
D
G S
BV DSS R DS(ON) ID
D
The SSM2314GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is suitable for low-voltage applications such as DC/DC converters and and general switching applications.
SOT-23-3
20V 75mΩ 3.5A
S G
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol RΘJA
Parameter Maximum Thermal Resistance, Junction-ambient3
Rating 20
± 12 3.5 2.8 10 1.38 0.01
-55 to 150 -55 to 150
Value 90
Units V V A A A W
W/°C °C °C
Unit °C/W
4/16/2005 Rev.
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