SSM2304N

SSM2304N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Small package outline Surface-mount package D Description SOT-23 G Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. S BV DSS R DS(ON) ID 25V 117mΩ 2.5A D Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 G S Rating 25 ±20 2.5 2 10 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 100 Unit °C/W Rev.2.02 3/11/2004 www.SiliconStandard.com 1 of 6 SSM2304N Electrical Characteristics @ Tj=25oC (u...