N-channel Enhancement-mode Power MOSFET
SSM2304N
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement Small package outline Surface-mount package
...
Description
SSM2304N
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement Small package outline Surface-mount package
D
Description
SOT-23 G
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
S
BV DSS R DS(ON) ID
25V 117mΩ
2.5A
D
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
G S
Rating 25 ±20 2.5 2 10 1.25 0.01
-55 to 150 -55 to 150
Units V V A A A W
W/°C °C °C
Max.
Value 100
Unit °C/W
Rev.2.02 3/11/2004
www.SiliconStandard.com
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SSM2304N
Electrical Characteristics @ Tj=25oC (u...
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