N-channel Enhancement-mode Power MOSFET
SSM2316GN N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
30V 42mΩ 4.7A
Pb-free; RoHS-comp...
Description
SSM2316GN N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
30V 42mΩ 4.7A
Pb-free; RoHS-compliant SOT-23-3
D
DESCRIPTION
The SSM2316GN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM2316GN is supplied in an RoHS-compliant SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications.
S SOT-23-3 G
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
TSTG TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 3, T A = 25°C
Pulsed drain current 1,2
TA = 70°C
Total power dissipation 3, TA = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol RΘJA
Parameter Maximum thermal resistance, junction-ambient3
Value 30
± 20 4.7 3.7 10 1.38 0.01
-55 to 150 -5...
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