SSM9915K

SSM9915K N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement Lower gate charge Fast switching characteristic Description D S D SOT-223 G Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 20V 50mΩ 6.2A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ±12 6.2 5 30 3.2 0.025 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 40 Unit °C/W Rev.1.01 4/06/2004 www.SiliconStandard.com 1 of 4 SSM9915K Electrical Characteristics @ Tj=25oC (unless otherwise s...