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SSM1333GU Dataheets PDF



Part Number SSM1333GU
Manufacturers Silicon Standard
Logo Silicon Standard
Description P-channel Enhancement-mode Power MOSFET
Datasheet SSM1333GU DatasheetSSM1333GU Datasheet (PDF)

SSM1333GU P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID -20V 600mΩ -550mA Pb-free; RoHS-compliant SOT-323/SC-70 D DESCRIPTION The SSM1333GU acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as drivers, high-side line and general load-switching circuits. The SSM1333GU is supplied in an RoHS-compliant SOT-323/SC-70 package, which is widely used for low power commercial and ind.

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SSM1333GU P-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID -20V 600mΩ -550mA Pb-free; RoHS-compliant SOT-323/SC-70 D DESCRIPTION The SSM1333GU acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as drivers, high-side line and general load-switching circuits. The SSM1333GU is supplied in an RoHS-compliant SOT-323/SC-70 package, which is widely used for low power commercial and industrial surface mount applications. SOT-323/SC-70 S G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current 3, T A = 25°C Pulsed drain current 1,2 TA = 70°C Total power dissipation 3, TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient3 Value -20 ± 12 -550 -44.


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