Document
SSM1333GU P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS R DS(ON) ID
-20V 600mΩ -550mA
Pb-free; RoHS-compliant SOT-323/SC-70
D
DESCRIPTION
The SSM1333GU acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as drivers, high-side line and general load-switching circuits.
The SSM1333GU is supplied in an RoHS-compliant SOT-323/SC-70 package, which is widely used for low power commercial and industrial surface mount applications.
SOT-323/SC-70
S G
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
TSTG TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 3, T A = 25°C
Pulsed drain current 1,2
TA = 70°C
Total power dissipation 3, TA = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol RΘJA
Parameter Maximum thermal resistance, junction-ambient3
Value -20 ± 12 -550 -44.