N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement
Description...
Description
www.DataSheet4U.com
Low on-resistance Capable of 2.5V gate drive Low drive current Simple drive requirement
Description
D
G S
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
SSM9915H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
BV DSS R DS(ON) ID
20V 50mΩ
20A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage
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Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD S
Rating 20 ± 10 20 16 41 26 0.2
-55 to 150 -55 to 150
Max. Max.
Value 4.8 110
TO-251(J)
...
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