DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
SSM9928(G)EO
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC...
Description
SSM9928(G)EO
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications
Description
G2 S2 S2 D2
TSSOP-8
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1
S1 S1 D1
BV DSS RDS(ON) ID
20V 23mΩ
5A
D1 D2 G1 G2
S1 S2
This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
20 ±12
5 3.5 25 1 0.008
V V A A A W W/°C
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
°C °C
Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance...
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