SSM28G45EM
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance High peak current capability 3.3V gate drive
C C C C
SO-8
G E E E
Absolute Maximum Ratings
Symbol
Parameter
VCE Collector-Emitter Voltage
VGE Gate-Emitter Voltage
VGEP
Pulsed Gate-Emitter Voltage
ICP PD @ TC=25°C1
Pulsed Collector Current Maximum Power Dissipation
TSTG
...
