Document
BYD Microelectronics Co., Ltd.
BF92N7002
60V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Features
z VDS =60 V z ID =300mA z RDS(ON) =2.8Ω TYP (VGS=10V)
RDS(ON) =3.8Ω TYP (VGS=4.5V) z Fast switching z 100% avalanche tested z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25℃
VGS Gate-Source Voltage
PD Power Dissipation (TC = 25°C)
TJ,Tstg
Operating junction and Storage Temperature Range
Ordering Information
Part Number BF92N7002
Package SOT-23
Value 60 300 ±20 350
-55 to +150
Unit V mA V
mW ℃
Packaging Reel
Datasheet
TS-MOS-PD-0018 Rev.A/0
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BYD Microe.