BF960NF06T

BYD Microelectronics Co., Ltd. BF960NF06T 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement. Features z VDS =60 V z ID =60A z Typical RDS(ON) =10m Ω (VGS=10V,ID=30A) z Fast switching z 100% avalanche tested z Improved dv/dt capability TO-252 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg Operating junction and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose （Note1） （Note2） （Note1） Value 60 60 240 ±20 215 38 1...