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BF9100BSNL

BYD

N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF9100BSNL 100V N-Channel MOSFET General Description This Power MOSFET device has speci...


BYD

BF9100BSNL

File Download Download BF9100BSNL Datasheet


Description
BYD Microelectronics Co., Ltd. BF9100BSNL 100V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any application with low gate drive requirement. Features z VDS =100 V z ID =100A z Typical RDS(ON) =8m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD Power Dissipation (TC = 25°C) TJ,Tstg TL Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose (Note1) (Note2) (Note1) Value 100 100 400 ±20 1700 33 227 -...




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