BYD Microelectronics Co., Ltd.
BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET
General Description
These N-Ch...
BYD Microelectronics Co., Ltd.
BF92N60/BF92N60L/BF92N60R/BF92N60T 600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V z ID =2A z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A) z Low CRSS (typical 4.5pF) z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS ID IDM VGS EAS IAR EAR dv/dt PD Tstg TL
Drain-Source Voltage
Drain Current(continuous)at Tc=25°C
Drain Current (pulsed)
(Note1)
Gate-Source Voltage
SinglePulseAvalanche Energy
(Note2)
Avalanche Current
(Note1)
RepetitiveAvalancheEnergy
(Note1)
PeakD...