N-Channel MOSFET
SLP2N60C / SLF2N60C
600V N-Channel MOSFET
General Description
This Pow er MOSFET is produced using SL semi‘s advanced p...
Description
SLP2N60C / SLF2N60C
600V N-Channel MOSFET
General Description
This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.
Features
2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast wsitching 100% avalanche tested Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
●
◀▲ {G ●
●
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single ...
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