N-Channel MOSFET
MDU06N110 – Single N-Channel Trench MOSFET 60V
MDU06N110
Single N-channel Trench MOSFET 60V, 52A, 11.0mΩ
ㄹ
General Des...
Description
MDU06N110 – Single N-Channel Trench MOSFET 60V
MDU06N110
Single N-channel Trench MOSFET 60V, 52A, 11.0mΩ
ㄹ
General Description
The MDU06N110 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU06N110 is suitable device for Synchronous Rectification For Server and general purpose applications.
Features
VDS = 60V ID = 52A @VGS = 10V RDS(ON)
< 11.0 mΩ @VGS = 10V 100% UIL Tested
DD DD
DD DD
D
S SSG
GS SS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Apr. 2015. Version 1.0
1
G S
Symbol VDSS VGSS
ID
IDM
PD
EAS ...
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