MDFS11N60

MDFS11N60 N-channel MOSFET 600V MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDFS11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 11A  RDS(ON) ≤ 0.55Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching G DS TO-220FT Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Juncti...