MMD80R1K2P

MMD80R1K2P Final Datasheet MMD80R1K2P 800V 1.2Ω N-channel MOSFET  Description MMD80R1K2P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 850 1.2 3 4.5 15.2 Unit V Ω V A nC  Package & Internal Circuit D G S D G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMD80R1K2PRH Marking 80R1K2P Temp. Range -55 ~ 150℃ Package TO-252 Packing RoHS Status Reel & Tap...