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MMF60R190Q Dataheets PDF



Part Number MMF60R190Q
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MMF60R190Q DatasheetMMF60R190Q Datasheet (PDF)

MMF60R190Q Datasheet MMF60R190Q 600V 0.19Ω N-channel MOSFET  Description MMF60R190Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.19 3 20 36 Unit V.

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MMF60R190Q Datasheet MMF60R190Q 600V 0.19Ω N-channel MOSFET  Description MMF60R190Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.19 3 20 36 Unit V Ω V A nC  Package & Internal Circuit D GDS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMF60R190QTH Marking 60R190Q Temp. Range -55 ~ 150℃ Package TO-220F Packing Tube RoHS Status Halogen Free Jun. 2021. Revision 1.2 1 Magnachip Semiconductor Ltd. MMF60R190Q Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage VDSS VGSS Continuous drain current(1) ID Pulsed drain current(2) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(3) Storage temperature Maximum operating junction temperature 1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V(BR)DSS IDM PD EAS dv/dt dv/dt Tstg Tj 600 ±30 20 13 60 33 420 50 15 -55 ~150 150 V V A A A W mJ V/ns V/ns ℃ ℃ TC = 25℃ TC = 100℃  Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 3.75 75 Unit ℃/W ℃/W Jun. 2021. Revision 1.2 2 Magnachip Semiconductor Ltd. MMF60R190Q Datasheet  Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source Breakdown voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Leakage Current Drain-Source On State Resistance Symbol Min. Typ. Max. Unit Test Condition V(BR)DSS 600 - - V VGS = 0V, ID = 250μA VGS(th) 2 3 4 V VDS = VGS, ID = 250μA IDSS - - 1 μA VDS = 600V, VGS = 0V IGSS - - 100 nA VGS = ±30V, VDS = 0V RDS(ON) - 0.17 0.19 Ω VGS = 10V, ID = 9.5A  Dynamic Characteristics (Tc=25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Energy Related (4) Turn On Delay Time Ciss Coss Crss Co(er) td(on) - 1336 - 1352 - 52 - 39 - 24 - VDS = 25V, VGS = 0V, pF f = 1.0MHz VDS = 0V to 480V, VGS = 0V, f = 1.0MHz Rise Time Turn Off Delay Time tr td(off) - 89 - 212 - ns VGS = 10V, RG = 25Ω, VDS = 300V, ID = 20A Fall Time tf - 68 - Total Gate Charge Gate – Source Charge Gate – Drain Charge Qg - 36 - Qgs - 9 - nC VGS = 10V, VDS = 480V, ID = 20A Qgd - 14 - Gate Resistance RG - 8 - Ω VGS = 0V, f = 1.0MHz 4) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS Jun. 2021. Revision 1.2 3 Magnachip Semiconductor Ltd. MMF60R190Q Datasheet  Reverse Diode Characteristics (Tc=25℃ unless otherwise specified) Parameter Continuous Diode Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Symbol Min. Typ. Max. Unit Test Condition ISD - - 20 A VSD - - 1.4 V ISD = 20A, VGS = 0V trr - 347 - ns ISD = 20A Qrr - 5.3 - μC di/dt = 100A/μs VDD = 100V Irrm - 30.5 - A Jun. 2021. Revision 1.2 4 Magnachip Semiconductor Ltd.  Characteristic Graph MMF60R190Q Datasheet Jun. 2021. Revision 1.2 5 Magnachip Semiconductor Ltd. MMF60R190Q Datasheet Jun. 2021. Revision 1.2 6 Magnachip Semiconductor Ltd. MMF60R190Q Datasheet Jun. 2021. Revision 1.2 7 Magnachip Semiconductor Ltd.  Test Circuit MMF60R190Q Datasheet Jun. 2021. Revision 1.2 8 Magnachip Semiconductor Ltd.  Physical Dimension TO-220F(3L) MMF60R190Q Datasheet [Unit:mm] Note : Package body size, length and width do not include mold flash, protrusions and gate burrs. Jun. 2021. Revision 1.2 9 Magnachip Semiconductor Ltd. MMF60R190Q Datasheet DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not con.


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