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MMF60R190Q Datasheet
MMF60R190Q
600V 0.19Ω N-channel MOSFET
Description
MMF60R190Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.19
3 20 36
Unit V Ω V A nC
Package & Internal Circuit D
GDS
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter Motor Control DC – DC Converters
Ordering Information
Order Code MMF60R190QTH
Marking 60R190Q
Temp. Range -55 ~ 150℃
Package TO-220F
Packing Tube
RoHS Status Halogen Free
Jun. 2021. Revision 1.2
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Magnachip Semiconductor Ltd.
MMF60R190Q Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter
Symbol
Rating
Unit Note
Drain – Source voltage Gate – Source voltage
VDSS VGSS
Continuous drain current(1)
ID
Pulsed drain current(2)
Power dissipation
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness(3)
Storage temperature Maximum operating junction temperature
1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) ISD ≤ ID, VDS peak ≤ V(BR)DSS
IDM PD EAS dv/dt dv/dt Tstg Tj
600 ±30 20 13 60 33 420 50 15 -55 ~150 150
V V A A A W mJ V/ns V/ns ℃ ℃
TC = 25℃ TC = 100℃
Thermal Characteristics
Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max
Symbol Rthjc Rthja
Value 3.75 75
Unit ℃/W ℃/W
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MMF60R190Q Datasheet
Static Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Drain – Source Breakdown voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source On State Resistance
Symbol Min. Typ. Max. Unit Test Condition
V(BR)DSS 600
-
-
V VGS = 0V, ID = 250μA
VGS(th)
2
3
4
V VDS = VGS, ID = 250μA
IDSS
-
-
1
μA VDS = 600V, VGS = 0V
IGSS
-
- 100 nA VGS = ±30V, VDS = 0V
RDS(ON)
- 0.17 0.19 Ω VGS = 10V, ID = 9.5A
Dynamic Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance Effective Output Capacitance Energy Related (4) Turn On Delay Time
Ciss Coss Crss Co(er) td(on)
- 1336 - 1352 - 52 - 39 - 24 -
VDS = 25V, VGS = 0V, pF f = 1.0MHz
VDS = 0V to 480V, VGS = 0V, f = 1.0MHz
Rise Time Turn Off Delay Time
tr td(off)
- 89 - 212 -
ns
VGS = 10V, RG = 25Ω, VDS = 300V, ID = 20A
Fall Time
tf
- 68 -
Total Gate Charge Gate – Source Charge Gate – Drain Charge
Qg
- 36 -
Qgs
-
9
-
nC
VGS = 10V, VDS = 480V, ID = 20A
Qgd
- 14 -
Gate Resistance
RG
-
8
-
Ω VGS = 0V, f = 1.0MHz
4) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
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Magnachip Semiconductor Ltd.
MMF60R190Q Datasheet
Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)
Parameter Continuous Diode Forward Current Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Symbol Min. Typ. Max. Unit Test Condition
ISD
-
-
20
A
VSD
-
-
1.4
V ISD = 20A, VGS = 0V
trr
- 347 -
ns
ISD = 20A
Qrr
- 5.3 -
μC di/dt = 100A/μs
VDD = 100V
Irrm
- 30.5 -
A
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Magnachip Semiconductor Ltd.
Characteristic Graph
MMF60R190Q Datasheet
Jun. 2021. Revision 1.2
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Magnachip Semiconductor Ltd.
MMF60R190Q Datasheet
Jun. 2021. Revision 1.2
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Magnachip Semiconductor Ltd.
MMF60R190Q Datasheet
Jun. 2021. Revision 1.2
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Magnachip Semiconductor Ltd.
Test Circuit
MMF60R190Q Datasheet
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Physical Dimension
TO-220F(3L)
MMF60R190Q Datasheet
[Unit:mm]
Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.
Jun. 2021. Revision 1.2
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Magnachip Semiconductor Ltd.
MMF60R190Q Datasheet
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not con.