MMD60R360Q

MMD60R360Q Datasheet MMD60R360Q 600V 0.36Ω N-channel MOSFET  Description MMD60R360Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.36 3 11 19 Unit V Ω V A nC  Package & Internal Circuit D D G S G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code MMD60R360QRH Marking 60R360Q Temp. Range -55 ~ 150℃ Package TO-252 Packing Reel RoHS Status Halogen Free Jul. 2021. Revision 1.2 1 Magnachip Semiconductor Ltd. MMD60R360Q Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Diode dv/dt ruggedness(2) Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS VDSS VGSS ID IDM PD EAS dv/dt dv...